- Ph.D. in Electrical Engineering, Purdue University, 1988
- M.S. in Electrical Engineering, Northeastern University, 1982
- B.S. in Electrical Engineering, University of Vermont, 1978
- Email: email@example.com
- Phone: 508.999.8466
- Fax: 508.999.8489
- Office: SENG Building (Group II), Room 214C
Dr. David P. Rancour is Associate Professor of Electrical Engineering at the University of Massachusetts Dartmouth. He has a B.S. in Electrical Engineering (Computer Engineering option) from the University of Vermont, an M.S. in Electrical Engineering (E/M fields and Digital Signal Processing) from Northeastern University, and a Ph.D. in Electrical Engineering (Solid State Devices & Materials) from Purdue University.
Dr. Rancour’s research interests have centered on defects in semiconductors. He has recently developed a theoretical model for a new defect characterization technique. Computer simulations show the new method to be more than 1000 times more sensitive than the standard technique. He has investigated defects in Gallium Arsenide epitaxial thin films, and has served as a consultant to M/A-COM, Inc., Burlington Semiconductor Operations, conducting defect characterization experiments on silicon PIN diodes.
As a United States Air Force officer, Dr. Rancour managed the engineering portions of an Air Force procurement contract for a ground based radar system. He was responsible for controls/displays and computer hardware. He also assisted in the design, fabrication, and testing of a TTL-based Optical Mark Reader for an Air Force research laboratory. Dr. Rancour has designed LCD fuel gauge display layouts for Simmonds Precision, and he has fabricated and tested a TTL-based wafer stepper interface for IBM.
Dr. Rancour is a member of the Institute of Electrical and Electronics Engineers, Electron Devices Society.
Areas of interest
- Quantum mechanics
- Solid State Devices